0201NY Enhancement-Mode N-channel SOT-23 MOSFET

0201NY Enhancement-Mode N-channel SOT-23 MOSFET

The 0201NY MOSFET is an enhancement-mode N-channel MOSFET with a compact SOT-23 package, optimized for surface-mount applications. This MOSFET is widely used in portable and battery-powered devices due to its low gate threshold voltage and ability to operate efficiently in low-power conditions. Its low on-resistance (RDS(on)) helps minimize power loss, improving the overall efficiency of the circuit. The N0201NY MOSFET is a small-signal N-channel MOSFET designed for use in various switching and amplification applications, particularly where compact, low-power solutions are required.

DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.

• Low On-Resistance: Provides low RDS(on), reducing power loss and improving efficiency.

• Fast Switching Speed: Enables rapid on/off transitions, making it suitable for high-speed switching applications.

• Low Gate Threshold Voltage: Operates effectively at low voltages, ideal for battery-operated devices.

• Compact Package: Small SOT-23 package for space-saving in dense PCB layouts.

• High Reliability: Robust design ensures reliable operation over a wide range of conditions.

Specifications of 0201NY Enhancement-Mode N-channel SOT-23 MOSFET

• Drain-Source Voltage (VDS): 20V

• Gate-Source Voltage (VGS): ±12V

• Drain Current (ID): 0.5A (continuous)

• On-Resistance (RDS(on)): Typically around 0.7Ω (at VGS = 4.5V)

• Power Dissipation (Ptot): 200mW

• Gate Threshold Voltage (VGS(th)): 0.4V to 1.2V

• Package: SOT-23

Package Includes

• 1 x 0201NY Enhancement-Mode N-channel SOT-23 MOSFET