2SA1386A Silicon PNP Power Epitaxial Planar Transistor

2SA1386A Silicon PNP Power Epitaxial Planar Transistor

The 2SA1386A is a PNP transistor of −180 V, −15 A. The product has constant hFE characteristics in a wide current range, providing high-quality audio sounds. The 2SA1386A is a PNP bipolar junction transistor (BJT) with high current and high voltage capabilities. It operates in a complementary fashion with its NPN counterpart (typically 2SC3519A). The transistor is widely used in audio amplifier circuits and power supply designs, providing reliable switching and amplification at high power levels. It features a low saturation voltage and fast switching characteristics, making it suitable for high-efficiency designs.

DNA solutions, Nashik has various types of Transistor's. Check out our complete collection of  Transistor's.

• High Voltage and Current Ratings: Capable of handling large voltages and currents, making it ideal for power applications.
  

• Complementary Pair: Can be used in combination with the NPN 2SC3519A transistor for push-pull amplifier designs.
  

• High Power Dissipation: Can dissipate a significant amount of power, suitable for power amplifier stages.
  

• Low Saturation Voltage: Reduces power losses during operation, improving efficiency.
  

• Fast Switching: Capable of fast switching, which is essential for audio and power supply applications.
  

Specifications of 2SA1386A Silicon PNP Power Epitaxial Planar Transistor

• Transistor Type: PNP
  

• Maximum Collector-Emitter Voltage (VCEO): -160V
  

• Maximum Collector-Base Voltage (VCBO): -160V
  

• Maximum Emitter-Base Voltage (VEBO): -5V
  

• Collector Current (IC): -10A (maximum)
  

• Power Dissipation (PC): 100W (maximum)
  

Package Includes

• 1 x 2SA1386A Silicon PNP Power Epitaxial Planar Transistor