IS34ML04G081-TLI INTEGRATED SILICON SOLUTION ISSI Flash Memory

IS34ML04G081-TLI INTEGRATED SILICON SOLUTION ISSI Flash Memory

The IS34ML04G081-TLI is a 4-gigabit (512 megabytes) Single-Level Cell (SLC) NAND flash memory device from Integrated Silicon Solution Inc. (ISSI). It is designed for high-performance and reliable data storage in various applications.

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• High Density Storage: Provides 4 Gbit of storage capacity suitable for various applications

• Fast Read/Write Operations: Supports random read times up to 25 µs and serial access times up to 25 ns

• Efficient Programming and Erasing: Typical program time of 400 µs and block erase time of 3 ms enhance performance

• Wide Voltage Range: Operates within a 2.7V to 3.6V supply range, offering flexibility in system designs

• Low Power Consumption: Features low active read current (10 mA) and standby current (8 µA), making it suitable for power-sensitive applications

Specifications of IS34ML04G081-TLI INTEGRATED SILICON SOLUTION ISSI Flash Memory

• Memory Type: Non-Volatile SLC NAND Flash

• Memory Size: 4 Gbit (512M x 8)

• Memory Interface: Parallel

• Page Size: (2K + 64) bytes

• Block Size: 128 KB

• Access Time: 25 ns

• Supply Voltage: 2.7V to 3.6V

• Active Read Current: 10 mA

• Operating Temperature Range: -40°C to +85°C

• Package: 48-pin TSOP I

Applications of IS34ML04G081-TLI INTEGRATED SILICON SOLUTION ISSI Flash Memory

• Industrial Automation

• Consumer Electronics

• Networking Equipment

• Automotive Systems

• Embedded Systems

Package Includes

      1 x IS34ML04G081-TLI INTEGRATED SILICON SOLUTION ISSI Flash Memory