SI2310 60V 3A N-Channel MOSFET (SOT23 )

SI2310 60V 3A N-Channel MOSFET (SOT23 )

This N−Channel logic level enhancement mode field effect transistor is produced using on semi’s proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on−state resistance. This device has been designed especially for low-voltage applications to replace digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values. Tags, SI2310-TP, SI2310, 2310, SI2310 MOSFET, SI2310 N Channel MOSFET, N-Channel MOSFET, 60V N-Channel MOSFET, 3A N-Channel MOSFET.

DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.

• Manufacturer Part No: SI2310

• Drain-Source Resistance: 105 m Ohms

• Gate-Source Voltage: -20V ~ +20V

• Gate-Source Threshold Voltage: 2V

• Gate Charge: 6 NC

Applications of SI2310 60V 3A N-Channel MOSFET (SOT23 )

• Control the speed of motors

• LED dimmers or flashers

• Switching high-power devices

• High-Speed switching applications

• Converters or Inverter circuits

Package Includes

• 1 x SI2310 60V 3A N-Channel MOSFET (SOT23 )