STW48N60M2 N-Channel 600V 42A 3-Pin Power MOSFET
- Stock: 26 InStock
- SKU: 7375 | DAG205
-
Rs.
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STW48N60M2 N-Channel 600V 42A 3-Pin Power MOSFET
STW48N60M2 N-Channel 600V 42A 3-Pin Power MOSFET
The STW48N60M2 N-Channel device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. The STW48N60M2 is a high-performance N-channel MOSFET from STMicroelectronics. It is designed for high-power switching applications and features low on-resistance and fast switching speeds. With a voltage rating of 600V and a current handling capability of 42A, it is ideal for use in applications such as power supplies, motor drives, and other power conversion systems.
DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.
- High Voltage Rating (600V): Ensures safe operation in high-voltage power switching applications.
- Low R<sub>DS(on)</sub> (On-Resistance): Reduces conduction losses, improving system efficiency.
- High Current Handling (42A): Capable of delivering significant current in demanding power systems.
- Fast Switching: The MOSFET's fast switching speed minimizes switching losses, making it suitable for high-frequency applications.
- Low Gate Charge (Q<sub>g</sub>): Reduces power consumption in gate driving circuits, leading to lower overall power dissipation.
Specifications of STW48N60M2 N-Channel 600V 42A 3-Pin Power MOSFET
- Drain-Source Voltage (V<sub>DSS</sub>): 600V.
- Drain Current (I<sub>D</sub>): 42A at 25°C.
- On-Resistance (R<sub>DS(on)</sub>): 0.08Ω (typical).
- Gate Threshold Voltage (V<sub>GS(th)</sub>): 3.0V - 5.0V.
- Max Power Dissipation (P<sub>D</sub>): 417W.
- Gate Charge (Q<sub>g</sub>): 172nC (typical).
- Total Gate Charge (Q<sub>g</sub>): 172nC.
Package Includes
- 1 x STW48N60M2 N-Channel 600V 42A 3-Pin Power MOSFET
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