SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

The SS8050G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Packaged in a compact SOT-23-3 form, it is ideal for use in space-constrained designs requiring a small, surface-mount solution. Its reliable performance and wide operating range make it a versatile component in various electronic circuits.

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• NPN Bipolar Junction Transistor

• Maximum collector-emitter voltage (V_CE): 25 V

• Maximum collector current (I_C): 1.5 A

• Power dissipation (P_tot): 0.5 W

• High current gain (h_FE): 100-300

• Compact SOT-23-3 package for surface mount applications

• High-speed switching capability

Specifications of SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

• Transistor Type: NPN

• Package Type: SOT-23-3

• Collector-Emitter Voltage (V_CE): 25 V

• Collector-Base Voltage (V_CB): 40 V

• Emitter-Base Voltage (V_EB): 5 V

• Collector Current (I_C): 1.5 A

• Power Dissipation (P_tot): 0.5 W

• DC Current Gain (h_FE): 100 - 300

Applications of SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3

• Signal amplification in low-power circuits

• Switching applications in electronic devices

• DC-DC converters

• Small motor drivers

• LED drivers

Package Includes

      1 x SS8050G Bipolar (BJT) Transistor NPN 25 V SOT-23-3