STP140NF75 Power MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.

The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

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Features of STP140NF75 MOSFET

• VDS Drain-source voltage (VGS = 0) 75V

• VDGR Drain-gate voltage (RGS = 20 kΩ) 75V

• VGS Gate- source voltage ± 20V

• ID Drain current (continuous) at TC = 25°C 120A

• ID Drain current (continuous) at TC = 100°C 100A

• IDM Drain current (pulsed) 480A

• Ptot Total dissipation at TC = 25°C 310W

• Derating Factor 2.08W/°C

• dv/dt Peak diode recovery voltage slope 10V/ns

• EAS Single pulse avalanche energy 750mJ

• Tstg Storage temperature -55 to 175°C

• Tj Max. operating junction temperature -55 to 175°C

• Rthj-case Thermal resistance junction-case max 0.48°C/W

• Rthj-amb Thermal resistance junction-ambient max 62.5°C/W

• TJ Maximum lead temperature for soldering purpose 300°C

Related Documents

• STP140NF75 Datasheet