HY3215 N-Channel Enhancement Mode TO-220 MOSFET

HY3215 N-Channel Enhancement Mode TO-220 MOSFET

The HY3215 N-Channel MOSFET is designed to provide efficient switching and reliable performance in power-driven applications. Operating as an enhancement-mode MOSFET, it requires a positive gate voltage relative to the source to turn on. Its TO-220 package allows for efficient heat dissipation, making it suitable for high-power circuits requiring thermal stability. This MOSFET has a high threshold voltage, low gate charge, and fast switching speed, which help optimize efficiency and response in power systems. The HY3215 is an N-Channel Enhancement Mode MOSFET, designed for switching applications and high-efficiency power conversion. Packaged in a TO-220 form, this MOSFET is suited for power supply circuits, DC-DC converters, and various motor control applications. 

DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.

• High Current Capacity: Supports large drain currents, making it suitable for high-power applications.

• Low On-Resistance (R_DS(on)): Reduces power loss, improving efficiency in power circuits.

• Fast Switching Speed: Allows for rapid transitions, ideal for high-frequency switching applications.

• High Drain-Source Voltage (V_DS): Can withstand significant voltage, adding to versatility.

• Rugged TO-220 Package: Enables efficient heat dissipation and stable operation in thermally demanding environments.

Specifications of HY3215 N-Channel Enhancement Mode TO-220 MOSFET

• Drain-Source Voltage (V_DS): 150V

• Continuous Drain Current (I_D): 32A

• On-Resistance (R_DS(on)): ≤ 0.055Ω (typical at V_GS = 10V)

• Gate Threshold Voltage (V_GS(th)): 2V - 4V

• Maximum Power Dissipation (P_D): 150W

Package Includes

• 1 x HY3215 N-Channel Enhancement Mode TO-220 MOSFET