IDW30C65D2XKSA1 Small Signal Switching DIODE

IDW30C65D2XKSA1 Small Signal Switching DIODE

The IDW30C65D2XKSA1 is a small signal switching diode integrated with an Insulated Gate Bipolar Transistor (IGBT). This component is designed for high-speed switching applications and is optimized for performance in circuits requiring low power consumption and fast switching times. The combination of diode and IGBT functionality in a single package makes it versatile for a variety of electronic applications.

DNA solutions, Nashik has various types of Diode 's. Check out our complete collection of  Diode's.

• High-Speed Switching: Optimized for rapid switching, reducing power loss and enhancing overall circuit efficiency.
  

• Low Forward Voltage Drop: The diode portion has a low forward voltage, which minimizes power dissipation during operation.
  

• Integrated IGBT: The IGBT provides efficient switching capabilities, handling high voltages and currents with minimal losses.
  

• Qualified according to JEDEC for target applications
  

• 650V Emitter Controlled technology
  

• Fast recovery
  

• Soft switching
  

• Low reverse recovery charge
  

• Low forward voltage and stable over temperature
  

• 175°C junction operating temperature
  

Specifications of IDW30C65D2XKSA1 Small Signal Switching DIODE 

• Diode Forward Voltage (V_F): 1.2V (typical)
  

• Diode Reverse Recovery Time (t_rr): 30ns
  

• IGBT Collector-Emitter Voltage (V_CE): 650V
  

• IGBT Continuous Collector Current (I_C): 30A
  

Package Includes

• 1 x IDW30C65D2XKSA1 Small Signal Switching DIODE