IRF5305PBF 55V P-Channel T-220 Power MOSFET

IRF5305PBF 55V P-Channel T-220 Power MOSFET

The IRF5305PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

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• Drain to source voltage Vds is -55V

• Gate to source voltage is ±20V

• On resistance Rds(on) of 60mohm at Vgs of -10V

• Power dissipation Pd of 110W at 25°C

• Continuous drain current Id of -31A at Vgs -10V and 25°C

• Junction temperature range from -55°C to 175°C

Specifications of IRF5305PBF 55V P-Channel T-220 Power MOSFET

• Channel Type- P Channel

• Continuous Drain Current Id- 31A

• Transistor Case Style- TO-220AB

• Rds(on) Test Voltage- 10V

• Power Dissipation- 110W

• Operating Temperature Max- 175°C

Package Includes

• 1 x IRF5305PBF 55V P-Channel T-220 Power MOSFET