• IRS20957S High-Voltage Power Amplifier N Channel MOSFET

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IRS20957S High-Voltage Power Amplifier N Channel MOSFET

  • Stock: Out Of Stock
  • SKU: 7339 | DAG322
  • Rs. 246.03 (inc GST)
    Rs.208.50 + GST

    Qty :

GST Invoice on all Purchase. So you will be eligible to take input tax credit.

IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.

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IRS20957S High-Voltage Power Amplifier N Channel MOSFET

IRS20957S High-Voltage Power Amplifier N Channel MOSFET

The IRS20957S High-Voltage Power Amplifier is a protected Class D audio driver with a floating PWM (Pulse Width Modulation) input for high-voltage Class D audio power amplifier designs. It integrates the PWM controller and MOSFET driver stage, providing a cost-effective and simplified solution for high-power, high-fidelity audio applications. The IRS20957S is specifically optimized for high-efficiency, low-distortion, and robust performance.

DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of IRS20957S High-Voltage Power Amplifier N Channel MOSFET

  • High-Voltage Tolerant: Capable of operating with a high voltage rail up to 200V.
  • Floating PWM Input: Allows flexibility in the input stage design and simplifies the circuit design.
  • Integrated Dead-Time Generation and Shoot-Through Protection: Prevents cross-conduction of the MOSFETs, enhancing reliability and efficiency.
  • Under-Voltage Lockout (UVLO) Protection: Prevents the operation of the device when the supply voltage is below the required threshold.
  • Over-Current Protection (OCP): Provides protection against overcurrent conditions by shutting down the driver when an overcurrent event is detected.
  • Over-Temperature Protection (OTP): Shuts down the driver to prevent thermal damage when the temperature exceeds the specified limit.
  • Low Power Consumption: Designed for efficient power use, minimizing heat generation in the driver circuitry.

Specifications of IRS20957S High-Voltage Power Amplifier N Channel MOSFET

  • Supply Voltage (VCC): 10V to 20V
  • High-Side Floating Supply Voltage (VB): Up to 200V
  • Output Source Current (IO+ Peak): 1.4A
  • Output Sink Current (IO- Peak): 1.8A
  • Quiescent Current (VCC): 3.6mA (typical)
  • Operating Temperature Range: -40°C to +125°C
  • Propagation Delay (High to Low): 110 ns (typical)
  • Output Voltage Rise Time (tr): 35 ns (typical)

    Package Includes

    • 1 x IRS20957S High-Voltage Power Amplifier N Channel MOSFET

    Extra Information
    Country of Origin China
    Imported By ElectroSource Private Limited

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