MG30G2CL3 NPN Triple-Diffused Darlington Power Transistor Module

MG30G2CL3 NPN Triple-Diffused Darlington Power Transistor Module

The MG30G2CL3 is a high-power Darlington transistor module manufactured by Toshiba, specifically designed to cater to demanding applications requiring reliable power switching. It is a silicon-based NPN module that integrates multiple components, offering high performance and compact design, ideal for industrial and power electronics systems.

DNA solutions, Nashik has various types of Transistor's. Check out our complete collection of Transistor's.

• Isolated Collector: The collector is electrically isolated from the case, enhancing safety and simplifying thermal management

• Integrated Components: Combines two power transistors and two freewheeling diodes in one package, reducing component count and assembly complexity

• High DC Current Gain: Ensures efficient amplification and switching performance

Specifications of MG30G2CL3 NPN Triple-Diffused Darlington Power Transistor Module

• Collector-Emitter Voltage: 600 V

• Collector Current : 30 A

• Collector Power Dissipation: 250 W

• DC Current Gain: ≥100

• Collector Capacitance: 350 pF

• Maximum Junction Temperature: 150°C

• Package Type: X99

Applications of MG30G2CL3 NPN Triple-Diffused Darlington Power Transistor Module

• Inverter Systems: Efficiently manages power conversion processes

• Servo Drives: Provides precise control in automation systems

• Industrial Motor Controls: Handles high-power requirements in industrial settings

Package Includes

      1 x MG30G2CL3 NPN Triple-Diffused Darlington Power Transistor Module