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  • D45VH10G PNP Bipolar Junction Power Transistor

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D45VH10G PNP Bipolar Junction Power Transistor


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  • Stock: Out Of Stock
  • SKU: 8741 | DAI033
  • Rs. 154.11 (inc GST)
    Rs.130.60 + GST

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D45VH10G PNP Bipolar Junction Power Transistor

D45VH10G PNP Bipolar Junction Power Transistor

D45VH10G is a PNP bipolar junction transistor (BJT) designed for high-power applications, including power switching, amplifier circuits, and motor control. It is housed in a TO-220 package, making it suitable for applications requiring efficient thermal management. This transistor offers high gain, low saturation voltage, and robust performance under high-current conditions.

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Features of D45VH10G PNP Bipolar Junction Power Transistor

  • High Collector Current (Ic): Supports up to 10A, suitable for power applications
  • High Voltage Capability: Collector-Emitter voltage (Vceo) of 80V, allowing operation in high-voltage circuits
  • Low Saturation Voltage (Vce(sat)): Ensures efficient switching and minimal power loss
  • High DC Current Gain (hFE): Provides amplification efficiency with values up to 100
  • TO-220 Package: Offers excellent heat dissipation for high-power applications

Specifications of D45VH10G PNP Bipolar Junction Power Transistor

  • Transistor Type: PNP
  • Collector-Emitter Voltage : 80V
  • Collector-Base Voltage: 80V
  • Emitter-Base Voltage: 5V
  • Collector Current: 10A
  • Power Dissipation: 60W
  • DC Current Gain: 30 - 100
  • Saturation Voltage: 2V
  • Operating Temperature Range: -65°C to +150°C
  • Package Type: TO-220

Applications of D45VH10G PNP Bipolar Junction Power Transistor

  • Power Amplifiers
  • Switching Circuits
  • Motor Control
  • Power Supply Regulation
  • Push-Pull Amplifiers

    Package Includes

          1 x D45VH10G PNP Bipolar Junction Power Transistor

    Extra Information
    Country of Origin China
    Imported By ElectroSource Private Limited

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