IRFB4332 POWER MOSFET (N Channel)
- Stock: Out Of Stock NotInStock
- SKU: 3691 | DAF011
-
Rs.
239.54 (inc GST)
Rs.203.00 + GSTQty :
GST Invoice on all Purchase. So you will be eligible to take input tax credit. |
IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com. |
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IRFB4332 N Channel Power MOSFET
IRFB4332 N-Channel Power Mosfet 250 V, 60 A, 0.033 ohm, TO-220AB, Through Hole
The IRFB4332PBF is a 250 Volts single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPULSE rating.
IRFB4332 HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of IRFB4332 MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this IRFB4332 MOSFET a highly efficient, robust and reliable device for PDP driving applications.
DNA solutions, Nashik has various types of P Channel and N Channel Power Mosfet's. Check out our complete collection of Power Mosfet's.
- Advanced Process Technology
- Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
- High Repetitive Peak Current Capability for Reliable Operation
- Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
- Low QG for Fast Response
- Short Fall & Rise Times for Fast Switching
- 175°C Operating Junction Temperature for Improved Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
Package Includes
1 x IRFB4332 POWER MOSFET (N Channel)
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