MT4C4001JDJ-6 1 MEG x 4 DRAM 5V, EDO PAGE Mode, Optional Self Refresh IC

MT4C4001JDJ-6 1 MEG x 4 DRAM 5V, EDO PAGE Mode, Optional Self Refresh IC

The MT4C4001JDJ-6 is a high-speed DRAM component optimized for performance-critical applications such as computing and embedded systems. With a 1 Meg x 4 configuration, this device offers fast access times and efficient operation. Its EDO page mode allows multiple data accesses per row address, reducing latency for sequential reads or writes. The optional self-refresh capability makes it suitable for low-power applications..

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• Density: 4 Megabits organized as 1M x 4.

• Voltage: Operates at a standard 5V ±10% power supply.

• Access Time: Supports a maximum speed of 60 ns (nanoseconds).

• Page Mode: EDO (Extended Data Out) technology enables faster data transfers compared to conventional fast page mode.

• Reduces the need to repeatedly open and close the same row in the memory array for sequential operations.

• Optional Self-Refresh: Supports self-refresh functionality for power-sensitive applications.

• CAS-before-RAS Refresh: Simplifies refresh operations.

• Operating Temperature Range: Typically supports commercial or industrial ranges depending on the variant.

• Package: Available in a 24-pin plastic SOJ (Small Outline J-lead) package.

Specifications of MT4C4001JDJ-6 1 MEG x 4 DRAM 5V, EDO PAGE Mode, Optional Self Refresh IC

• Memory Type: Dynamic Random-Access Memory (DRAM)

• Memory Size: 4 Megabits

• Access Time: 60 ns

• Package Type: 28-pin DIP

• Supply Voltage: 5V ± 10% (4.5V to 5.5V)

Applications of MT4C4001JDJ-6 1 MEG x 4 DRAM 5V, EDO PAGE Mode, Optional Self Refresh IC

• Used in early computer system

• Embedded Systems

• Industrial Control Systems

• Consumer Electronics

• Networking Equipment

Package Includes