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SIRA18BDP-T1-GE3 , N Channel, 30 V Power MOSFET
- Stock: Out Of Stock NotInStock
- SKU: 7346 | DAG193
-
Rs.
35.40 (inc GST)
Rs.30.00 + GSTQty :
GST Invoice on all Purchase. So you will be eligible to take input tax credit. |
IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com. |
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SIRA18BDP-T1-GE3 , N Channel, 30 V Power MOSFET
SIRA18BDP-T1-GE3 , N Channel, 30 V Power MOSFET
The SIRA18BDP-T1-GE3 is a Power MOSFET in a compact, surface-mount package. It features a low gate charge, low R_DS(on) (Drain-Source On-Resistance), and fast switching capability, making it suitable for high-efficiency, high-speed switching applications.
DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.
If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India. |
Features of SIRA18BDP-T1-GE3 , N Channel, 30 V Power MOSFET
- N-Channel MOSFET: Suitable for a variety of power switching applications.
- Low R_DS(on): Provides efficient switching and minimizes power losses.
- High Power Density: Capable of handling significant power loads in a small form factor.
- Low Gate Charge (Qg): Reduces the driving requirements for faster switching.
- Fast Switching: Ideal for applications that require rapid switching.
Specifications of SIRA18BDP-T1-GE3 , N Channel, 30 V Power MOSFET
- Drain-Source Voltage (V_DS): 40V
- Continuous Drain Current (I_D): 100A (at T_C = 25°C)
- Pulsed Drain Current (I_DM): 400A
- Gate-Source Voltage (V_GS): ±20V
- R_DS(on) (Max): 2.9mΩ at V_GS = 10V, I_D = 20A
- Total Gate Charge (Qg): 38 nC at V_GS = 10V
Package Includes
- 1 x SIRA18BDP-T1-GE3 , N Channel, 30 V Power MOSFET
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