SPW55N80C3 N-Channel Power MOSFET

SPW55N80C3 N-Channel Power MOSFET

The SPW55N80C3 is a high-voltage N-channel power MOSFET. It is designed to handle high power and high efficiency in various applications, such as power supplies, motor control, and inverters. Built using advanced CoolMOS™ technology, the SPW55N80C3 provides low conduction and switching losses, making it ideal for high-performance power conversion systems.

DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.

• High Voltage Rating: Capable of with standing high drain-source voltages (V_DS) of up to 800V, making it suitable for high-voltage applications.
  

• Low On-Resistance: Extremely low R_DS(on) (55mΩ) ensures minimal power loss during conduction, improving efficiency.
  

• Fast Switching: High-speed switching capability reduces switching losses, making it ideal for high-frequency applications.
  

• Low Gate Charge (Q_g): The device has a low gate charge, reducing power consumption in driving the MOSFET.
  

Specifications of SPW55N80C3 N-Channel Power MOSFET

• Drain-Source Voltage (V_DS): 800 V
  

• Continuous Drain Current (I_D): 55 A (at 25°C)
  

• Pulsed Drain Current (I_DM): 165 A
  

• R_DS(on) (Max): 55 mΩ at V_GS = 10 V
  

• Gate Threshold Voltage (V_GS(th)): 3.0 – 5.0 V
  

• Total Gate Charge (Q_g): 220 nC (typical)
  

• Power Dissipation (P_D): 830 W
  

Package Includes

• 1 x SPW55N80C3 N-Channel Power MOSFET